Method and structure to improve reliability of cop
专利名称:Method and structure to improve reliability
of copper interconnects
发明人:Bulent M. Basol,Homayoun Talieh申请号:US10858766申请日:20040601公开号:US07129165B2公开日:20061031
专利附图:
摘要:A method of forming a conductor structure on a surface of a wafer is provided.The surface of the wafer includes cavities separated by field regions. Initially, a barrierlayer is deposited on the surface that includes cavities separated by field regions. A thin
seed layer with a substantially uniform thickness is deposited on the barrier layer. Thebarrier layer and the seed layer portions in the cavities occupy less than 30% of thevolume of each cavity. The remaining volume of each cavity is filled with a conductivematerial which is formed on the seed layer. The conductive layer has a substantially smallthickness. After forming the conductive layer, the wafer is annealed to increase grain sizein the conductive layer and the seed layer.
申请人:Bulent M. Basol,Homayoun Talieh
地址:Manhattan Beach CA US,San Jose CA US
国籍:US,US
代理机构:Knobbe Martens Olson & Bear LLP
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