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Method and structure to improve reliability of cop

来源:华佗小知识
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专利名称:Method and structure to improve reliability

of copper interconnects

发明人:Bulent M. Basol,Homayoun Talieh申请号:US10858766申请日:20040601公开号:US07129165B2公开日:20061031

专利附图:

摘要:A method of forming a conductor structure on a surface of a wafer is provided.The surface of the wafer includes cavities separated by field regions. Initially, a barrierlayer is deposited on the surface that includes cavities separated by field regions. A thin

seed layer with a substantially uniform thickness is deposited on the barrier layer. Thebarrier layer and the seed layer portions in the cavities occupy less than 30% of thevolume of each cavity. The remaining volume of each cavity is filled with a conductivematerial which is formed on the seed layer. The conductive layer has a substantially smallthickness. After forming the conductive layer, the wafer is annealed to increase grain sizein the conductive layer and the seed layer.

申请人:Bulent M. Basol,Homayoun Talieh

地址:Manhattan Beach CA US,San Jose CA US

国籍:US,US

代理机构:Knobbe Martens Olson & Bear LLP

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