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专利名称：Method of forming dual damascene
structure
发明人：Chine-Gie Lou,Su-Yuan Chang申请号：US09611563申请日：20000707公开号：US06372653B1公开日：20020416
专利附图：
摘要：A method of forming a dual damascene structure. A first organic low dielectricconstant dielectric layer, a heat diffusion layer and a second organic low dielectricconstant dielectric layer are formed sequentially over a substrate. A first mask layer
having a via opening pattern and a second mask layer having a trench pattern are formedsequentially over the second organic. The second organic low dielectric constant
dielectric layer exposed by the via opening pattern is etched using the first mask layer asa hard mask layer. The heat diffusion layer exposed by the first mask layer and the viaopening in the trench region are removed using the second mask layer and the secondorganic low dielectric constant dielectric layer as masks. Hence, the trench pattern andthe via opening pattern are transferred to the first mask layer and the heat diffusionlayer, respectively. The second and the first organic low dielectric constant dielectriclayer are etched using the second mask layer and the heat diffusion layer as a hard mask.Ultimately, the trench and via opening of a dual damascene structure are formed.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
代理机构：J.C. Patents
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