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专利名称：Method for producing electrical through
hole interconnects and devices madethereof
发明人：Eric Beyne,Riet Labie申请号：US10817763申请日：20040402公开号：US06908856B2公开日：20050621
专利附图：
摘要：The invention relates to a method for the fabrication of a device comprisingelectrical through hole interconnects. In one embodiment, the method comprisesanisotropical dry etching of a patternable dielectric material within a substrate hole. Oneaspect of the invention provides a novel method for producing via or through holeinterconnects between microelectronic elements, which is relatively easy to perform andcan be applied relatively cheaply compared to the state of the art. The method should,for instance, be applicable in thin chip technology as MCM (Multi Chip Module) andsystem in a package (SIP) technology.
申请人：Eric Beyne,Riet Labie
地址：Leuven BE,Kessel-Lo BE
国籍：BE,BE
代理机构：Knobbe Martens Olson & Bear LLP
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