华佗小知识
您的当前位置:首页FMMT2222资料

FMMT2222资料

来源:华佗小知识
SOT23 NPN SILICON PLANARSWITCHING TRANSISTORS

ISSUE 3 󰂖 FEBRUARY 1996FEATURES*Fast switchingPARTMARKING DETAILSFMMT2222 󰂖 1BZFMMT2222A 󰂖 1PFMMT2222R 󰂖 2PFMMT2222AR 󰂖 3PCOMPLEMENTARY TYPESFMMT2222󰂖 FMMT2907FMMT2222A󰂖 FMMT2907AFMMT2222FMMT2222ACBEABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageContinuous Collector CurrentPower Dissipation at Tamb=25°CSYMBOLVCBOVCEOVEBOICPtotFMMT222260305600330-55 to +150FMMT2222A75406UNITVVVmAmW°COperating and Storage Temperature RangeTj:TstgPARAMETERSYMBOLV(BR)CBOV(BR)CEOV(BR)EBOICBOELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).Collector-BaseBreakdown VoltageCollector-EmitterBreakdown VoltageEmitter-BaseBreakdown VoltageCollector Cut-OffCurrentEmitter Cut-OffCurrentCollector-EmitterCut-Off CurrentCollector-EmitterSaturation VoltageBase-Emitter Saturation VoltageStatic ForwardCurrent TransferRatioFMMT2222FMMT2222AUNITCONDITIONS.MIN.MAX.MIN.MAX.6075VIC=10µA, IE=03051010IEBOICEXVCE(sat)VBE(sat)hFE0.635507535100503010100.31.02.02.06101010100.31.01.22.0VVµAIC=10mA, IB=0IE=10µA, IC=0VCB=50V, IE=0VCB=60V, IE=0VCB=50V, IE=0, Tamb=150°CVCB=60V, IE=0, Tamb=150°CVEB=3V, IC=0VCE=60V, VEB(off) =3V IC=150mA, IB=15mA*IC=500mA, IB=50mA*IC=150mA, IB=15mA*IC=500mA, IB=50mA*IC=0.1mA, VCE=10V*IC=1mA, VCE=10VIC=10mA, VCE=10V*IC=10mA, VCE=10V, Tamb=-55°CIC=150mA, VCE=10V*IC=150mA, VCE=1V*IC=500mA, VCE=10V*nAnAµAnAnAVVVV0.6355075351005040300300*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%Spice parameter data is available upon request for this device

元器件交易网www.cecb2b.com

FMMT2222FMMT2222A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERSYMBOLfTCoboCibotdtrtstfTransitionFrequencyOutput CapacitanceInput CapacitanceDelay TimeRise TimeStorage TimeFall TimeFMMT2222MIN.MAX.250830102522560FMMT2222AMIN.MAX.300825102522560UNITMHzpFpFnsnsnsnsCONDITIONS.IC=20mA, VCE=20Vf=100MHzVCB=10V, IE=0,f=140KHzVEB=0.5V, IC=0f=140KHzVCC=30V, VBE(off)=0.5VIC=150mA, IB1=15mA(See Delay Test Circuit)VCC=30V, IC=150mAIB1= IB2=15mA(See Storage TestCircuit)DELAY AND RISE 󰂖 TEST CIRCUIT

+30VGenerator rise time <2nsPulse width (t1)<200nsDuty cycle = 2%9.9V

619Ω200Ω0

0.5V

Scope:Rin> 100 kΩCin< 12 pF

Rise Time < 5 ns

STORAGE TIME AND FALL TIME 󰂖 TEST CIRCUIT

+30V=100µs<5ns+16.2 V 󰀰󰀰Ω01KΩ-13.8 V=500µs1N916-3VScope:Rin> 100 kΩCin< 12 pFRise Time < 5 nsDuty cycle = 2%

因篇幅问题不能全部显示,请点此查看更多更全内容